Infrared Emitters High Speed Emitter 5V 50mW 830nm 10 Deg
TSHG8200: Infrared Emitters High Speed Emitter 5V 50mW 830nm 10 Deg
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Wavelength : | 830 nm | Radiant Intensity : | 1600 mW/sr | ||
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | T-1 3/4 | Packaging : | Bulk |
PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
Reverse voltage |
VR |
5 |
V | |
Forward current |
IF |
100 |
mA | |
Peak forward current |
tp/T = 0.5, tp = 100 s |
IFM |
200 |
mA |
Surge forward current |
tp = 100 s |
IFSM |
1 |
A |
Power dissipation |
PV |
180 |
mW | |
Junction temperature |
Tj |
100 |
||
Operating temperature range |
Tamb |
- 40 to + 85 |
||
Storage temperature range |
Tstg |
- 40 to + 100 |
||
Soldering temperature |
t 5 s, 2 mm from case |
Tsd |
260 |
|
Thermal resistance junction/ambient |
J-STD-051, leads 7 mm soldered on PCB |
RthJA |
230 |
K/W |
TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.