Infrared Emitters High Speed Emitter 5V 50mW 850nm 22 Deg
TSHG6400: Infrared Emitters High Speed Emitter 5V 50mW 850nm 22 Deg
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Wavelength : | 850 nm | Radiant Intensity : | 700 mW/sr | ||
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | T-1 3/4 | Packaging : | Bulk |
Parameter | Symbol | TEST CONDITIONS | Value | Unit |
Reverse Voltage | VR | 5 | V | |
Forward Current | IF | 100 | mA | |
Peak Forward Current | IFM | tp/T = 0.5, tp = 100 s | 200 | mA |
Surge Forward Current | IFSM | tp = 100 s | 1 | A |
Power Dissipation | PV | 250 | mW | |
Junction Temperature | Tj | 100 | ||
Operating Temperature Range | Tamb | - 40 to + 85 | ||
Storage Temperature Range | Tstg | - 40 to + 100 | ||
Soldering Temperature | Tsd | t 5 sec, 2 mm from case | 260 | |
Thermal Resistance Junction/ Ambient |
RthJA | 300 | K/W |
TSHG6400 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package.
TSHG6400 series combines high speed with high radiant power at wavelength of 850 nm.