TSG25N100DF

The TSG25N100DF is one kind of isolated gate bipolar transistor(IGBT) isotop power module,it has some features such as:(1)voltage-controlled gate;(2)low on-voltage drop Vce;(3)anti-parallel fast diode included;(4)fast switching speed;(5)exellent thermal stability,very low Rth junction case.Also it can be used in motor drives,ups converters,power suppliers and resonant power converters.

The absolute maximum ratings of the TSG25N100DF can be summerized as:(1)collector-emitter voltage(Vge=0):1000 V;(2)collector-emitter voltage(Rge=20k):1000 V;(3)gate-emitter voltage:+20 V or -20 V;(4)collector current(continuous) at Tc=25:50 A;(5)collector current(continuous) at Tc=100:25 A;(6)collector current(pulsed):100 A;(7)total dissipation at Tc=25:300 W;(8)derating factor:2.4 W/;(9)storage temperature:-55 to 150;(10)max.operating junction temperature:150;(11)insulation withstand voltage(AC-RMS):2500 V.

If you want to know more information about this part number such as the electrical characteristics of TSG25N100DF,please download the datasheet in www.chinaicmart.com and www.seekic.com