TSD4M150F

The TSD4M150F is designed as one kind of N-channel enhancement mode isofet power MOS transistor modules. Typical applications include DC/DC & DC/AC converters, SMPS&UPS, motor control and output stage for PWM, ultrasonic circuits.

TSD4M150F has eight features. (1)High current power MOS module. (2)Very low Rth junction to case. (3)Dual source contacts. (4)Very large SOA, large peak power capability. (5)Isolated case (2500V rms). (6)Easy to mount. (7)Very low internal parasitic inductance (typically <5ns). (8)Avalanche ruggedness technology. Those are all the main features.

Some absolute maximum ratings of TSD4M150F have been concluded into several points as follow. (1)Its drain to source voltage would be 100V. (2)Its drain to gate voltage would be 100V. (3)Its gate to source voltage would be +/-20V. (4)Its drain current continuous would be 135A at Tc=25°C and would be 85A at Tc=100°C. (5)Its drain current pulsed would be 500A. (6)Its total dissipation at Tc=25°C would be 500W. (7)Its derating factor would be 4W/°C. (8)Its storage temperature range would be from -55°C to 150°C. (9)Its max operating junction temperature would be 150°C. (10)Its insulation withstand voltage (AC-RMS) would be 2500V. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of TSD4M150F are concluded as follow. (1)Its drain to source breakdown voltage would be min 100V. (2)Its zero gate voltage drain current would be max 400uA at Vds=max rating and would be max 2mA at Vds=max ratingx0.8 and Tc=125°C. (3)Its gate to body leakage current Vds=0 would be max +/-400nA. (4)Its gate threshold voltage would be min 2V and max 4V. (5)Its static drain to source on resistance would be max 0.014ohms. (6)Its forward transconductance would be min 20mho. And so on. If you have any question or suggestion or want to know more information about TSD4M150F please contact us for details. Thank you!