TSD20N100F

The TSD20N100F is one kind of N-channel enhancement mode and power mos transistor module,it has some features:(1)very high density power mos technology;(2)high current power mos module;(3)very low Rth junction to case;(4)isolated case(2500V RMS);(5)easy to mount;(6)low internal parasitic inductance(typically 5nH)(7)power mos transistor module with fast recovery bulk diode:trr<300 ns@ Tj=150.Also it can be used in DC/DC & DC/AC converters and SMPS & UPS and motor control.

The absolute maximum ratings of TSD20N100F:(1)drain-source voltage(Vgs=0):1000 V;(2)drain-gate voltage(Rgs=20 K):1000 V;(3)gate-source voltage:+20 V or -20 V;(4)drain current(continuous) at Tc=25:20 A;(5)drain current(continuous) at Tc=100:12.5 A;(6)drain current(pulsed):70 A;(7)total dissipation at Tc=25:500 W;(8)derating factor:4 W/;(9)storage temperature:-55 to 150;(10)max.operating junction temperature:150 and (11)insulation withstand voltage(AC):2500 V.If you want to know more information about TSD20N100F such as the electrical characteristics,please download the datasheet in www.chinaicmart.com and www.seekic.com