TSD180N10F

Features: SpecificationsDescriptionThe TSD180N10F is one kind of N-channel enhancement mode and power mos transistor module,it has some features:(1)very high density power mos technology;(2)high current power mos module;(3)very low Rth junction to case;(4)isolated case(2500V RMS);(5)easy to mount;...

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SeekIC No. : 004529340 Detail

TSD180N10F: Features: SpecificationsDescriptionThe TSD180N10F is one kind of N-channel enhancement mode and power mos transistor module,it has some features:(1)very high density power mos technology;(2)high cur...

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Part Number:
TSD180N10F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/11

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Product Details

Description



Features:






Specifications






Description

The TSD180N10F is one kind of N-channel enhancement mode and power mos transistor module,it has some features:(1)very high density power mos technology;(2)high current power mos module;(3)very low Rth junction to case;(4)isolated case(2500V RMS);(5)easy to mount;(6)low internal parasitic inductance(typically 5nH)(7)power mos transistor module with fast recovery bulk diode:trr<300 ns@ Tj=150.Also it can be used in DC/DC & DC/AC converters and SMPS & UPS and motor control.

The absolute maximum ratings of TSD180N10F:(1)drain-source voltage(Vgs=0):100 V;(2)drain-gate voltage(Rgs=20 K):100 V;(3)gate-source voltage:+20 V or -20 V;(4)drain current(continuous) at Tc=25:180 A;(5)drain current(continuous) at Tc=100:112 A;(6)drain current(pulsed):540 A;(7)total dissipation at Tc=25:500 W;(8)derating factor:4 W/;(9)storage temperature:-55 to 150;(10)max.operating junction temperature:150 and (11)insulation withstand voltage(AC):2500 V.If you want to know more information about TSD180N10F such as the electrical characteristics,please download the datasheet in www.chinaicmart.com and www.seekic.com






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