Infrared Emitters 17 Degree 40mW
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Wavelength : | 940 nm | Beam Angle : | +/- 17 |
Radiant Intensity : | 60 mW/sr | Maximum Operating Temperature : | + 100 C |
Minimum Operating Temperature : | - 55 C | Package / Case : | T-1 3/4 |
Packaging : | Bulk |
·Infrared remote control units with high power requirements
·Free air transmission systems
·Infrared source for optical counters and card readers
·IR source for smoke detectors
Parameter | Test Conditions | Symbol | Value | Unit |
Reverse Voltage | VS | 5 | V | |
Forward Current | IF | 100 | mA | |
Peak Forward Current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
Surge Forward Current | tp = 100 s | IFSM | 1.5 | A |
Power Dissipation | PV | 210 | mW | |
Junction Temperature | Tj | 100 | ||
Operating Temperature Range | Tamb | 55...100 | ||
Storage Temperature Range | Tstg | 55...100 | ||
Soldering Temperature | Tsd | 260 | ||
Thermal Resistance Junction/Ambient | t 5sec, 2 mm from case | RthJA | 350 | K/W |
TSAL7200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in a clear plastic package. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages of the TSAL7200 at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.