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TS8405P

Features: • -4.9A, -12V RDS(ON) = 50m at -4.5 Volts• -4.4A, -12V RDS(ON) = 70m at -2.5 Volts• -4.0A, -12V RDS(ON) = 90m at -1.8 Volts• Low profile package: less than 0.8mm height when mounted on PCB.• Occupies only 2.25 mm2 of PCB area. Less than 25% of the area of a ...

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SeekIC No. : 004528988 Detail

TS8405P: Features: • -4.9A, -12V RDS(ON) = 50m at -4.5 Volts• -4.4A, -12V RDS(ON) = 70m at -2.5 Volts• -4.0A, -12V RDS(ON) = 90m at -1.8 Volts• Low profile package: less than 0.8mm he...

TS8405P Data Sheet

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Part Number:
TS8405P
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

• -4.9A, -12V RDS(ON) = 50m at -4.5 Volts
• -4.4A, -12V RDS(ON) = 70m at -2.5 Volts
• -4.0A, -12V RDS(ON) = 90m at -1.8 Volts
• Low profile package: less than 0.8mm height when mounted on PCB.
• Occupies only 2.25 mm2 of PCB area. Less than 25% of the area of a SSOT-6.
• Excellent thermal characteristics.
• Lead free solder bumps available.


Specifications

Symbol
Parameter
Ratings
Units
VDSS
 Drain-Source Voltage
-12
V
VGSS
 Gate-Source Voltage
+8
V
ID
 Drain Current                       Continuous 
                                             Pulsed
-4.9
A
-10
PD
 Power Dissipation (Steady State)
1.5
W
TJ,TSTG
 Operating and Storage Junction Temperature Range
-55 to +150
Thermal Characteristics
RJA
 Thermal Resistance, Junction-to-Ambient
85
/W
RJR
 Thermal Resistance, Junction-to-Balls
12



Description

Taiwan Semiconductor's new low cost, state of the art MicroSURF™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and R DS(ON) plus provides an ultralow Qg X R DS(ON) figure of merit of the TS8405P.


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