Features: • -4.9A, -12V RDS(ON) = 50m at -4.5 Volts• -4.4A, -12V RDS(ON) = 70m at -2.5 Volts• -4.0A, -12V RDS(ON) = 90m at -1.8 Volts• Low profile package: less than 0.8mm height when mounted on PCB.• Occupies only 1.21 mm2 of PCB area. Less than 30% of the area of a ...
TS4405P: Features: • -4.9A, -12V RDS(ON) = 50m at -4.5 Volts• -4.4A, -12V RDS(ON) = 70m at -2.5 Volts• -4.0A, -12V RDS(ON) = 90m at -1.8 Volts• Low profile package: less than 0.8mm he...
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SYMBOL | PARAMETER |
Ratings |
UNIT |
VDSS | Drain-Source Voltage |
-12 |
V |
VGSS | Gate-Source Voltage |
±8 |
V |
ID | Drain Current Continuous Pulsed |
-4.9 |
A |
-10 | |||
PD | Power Dissipation (Steady State) |
1.5 |
W |
TJ, TSTG | Storage temperature |
-65~150 |
Taiwan Semiconductor TS4405P's new low cost, state of the art MicroSURF™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultralow Qg X RDS(ON) figure of merit.