TS27M4C

Features: ·LOW POWER CONSUMPTION : 150µA/op·OUTPUT VOLTAGE CAN SWING TO GROUND·EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS·STABLE AND LOW OFFSET VOLTAGE·THREE INPUT OFFSET VOLTAGE SELECTIONSPinoutSpecifications Symbol Parameter TS27M4C/AC/BC TS27M4I/AI/BI TS27M4M/AM/BM Unit VCC+ ...

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TS27M4C Picture
SeekIC No. : 004528539 Detail

TS27M4C: Features: ·LOW POWER CONSUMPTION : 150µA/op·OUTPUT VOLTAGE CAN SWING TO GROUND·EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS·STABLE AND LOW OFFSET VOLTAGE·THREE INPUT OFFSET VOLTAGE SELECTIONSPin...

floor Price/Ceiling Price

Part Number:
TS27M4C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

·LOW POWER CONSUMPTION : 150µA/op
·OUTPUT VOLTAGE CAN SWING TO
   GROUND
·EXCELLENT PHASE MARGIN ON
   CAPACITIVE LOADS
·STABLE AND LOW OFFSET VOLTAGE
·THREE INPUT OFFSET VOLTAGE
   SELECTIONS



Pinout

  Connection Diagram


Specifications

Symbol Parameter TS27M4C/AC/BC TS27M4I/AI/BI TS27M4M/AM/BM Unit
VCC+ Supply Voltage 1) 18 V
Vid Differential Input Voltage 2) ±18 V
Vi Input Voltage 3) -0.3 to 18 V
Io Output Current for VCC+ 15V ±30 mA
Iin Input Current ±5 mA
Toper Operating Free-Air Temperature Range 0 to +70 -40 to +125 -55 to +125 °C
Tstg Storage Temperature Range -65 to +125 °C



Description

These devices of the TS27M4C are low cost, low power quad oper- ational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process allowing an ex- cellent consumption-speed ratio. These series are ideally suited for low consumption applications.

Three power consumptions of the TS27M4C are available allowing to have always the best consumption-speed ratio:
          · ICC = 10µA/amp.: TS27L4 (very low power)
          · ICC = 150µA/amp.: TS27M4 (low power)
          · ICC = 1mA/amp.: TS274 (standard)

These CMOS amplifiers of the TS27M4C offer very high input im- pedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see fig-ure 2).




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