Features: · LOW POWER CONSUMPTION : 150µA/op· OUTPUT VOLTAGE CAN SWING TO GROUND· EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS· STABLE AND LOW OFFSET VOLTAGE· THREE INPUT OFFSET VOLTAGE SELECTIONSPinoutSpecifications Symbol Parameter TS27M2C/AC/BC TS27M2I/AI/BI TS27M2M/AM/BM Unit ...
TS27M2C,I,M: Features: · LOW POWER CONSUMPTION : 150µA/op· OUTPUT VOLTAGE CAN SWING TO GROUND· EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS· STABLE AND LOW OFFSET VOLTAGE· THREE INPUT OFFSET VOLTAGE SELECTIO...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter | TS27M2C/AC/BC | TS27M2I/AI/BI | TS27M2M/AM/BM | Unit |
VCC + | Supply Voltage 1) | 18 | V | ||
Vi | nput Voltage 3) | -0.3 to 18 | V | ||
Vid | Differential Input Voltage 2) | ±18 | V | ||
Io | Output Current for V + 15V | ±30 | mA | ||
Iin | Input Current | ±5 | mA | ||
Toper | Opearting Free-air Temperature Range | 0 to +70 | -40 to +125 | -55 to +125 | |
Tstg | Storage Temperature Range | -65 to +150 |
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
These devices of the TS27M2C,I,M are low cost, low power dual oper- ational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process allowing an ex- cellent consumption-speed ratio. These series are ideally suited for low consumption applications.
Three power consumptions of the TS27M2C,I,M are available allowing to have always the best consumption-speed ratio:
· ICC = 10µA/amp.: TS27L2 (very low power)
· ICC = 150µA/amp.: TS27M2 (low power)
· ICC = 1mA/amp.: TS272 (standard)
These CMOS amplifiers of the TS27M2C,I,M offer very high input im- pedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see fig-ure 2).
P