TS27M2AC

Features: · LOW POWER CONSUMPTION : 150µA/op· OUTPUT VOLTAGE CAN SWING TO GROUND· EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS· STABLE AND LOW OFFSET VOLTAGE· THREE INPUT OFFSET VOLTAGE SELECTIONSPinoutSpecifications Symbol Parameter TS27M2C/AC/BC TS27M2I/AI/BI TS27M2M/AM/BM Unit ...

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TS27M2AC Picture
SeekIC No. : 004528534 Detail

TS27M2AC: Features: · LOW POWER CONSUMPTION : 150µA/op· OUTPUT VOLTAGE CAN SWING TO GROUND· EXCELLENT PHASE MARGIN ON CAPACITIVE LOADS· STABLE AND LOW OFFSET VOLTAGE· THREE INPUT OFFSET VOLTAGE SELECTIO...

floor Price/Ceiling Price

Part Number:
TS27M2AC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

· LOW POWER CONSUMPTION : 150µA/op
· OUTPUT VOLTAGE CAN SWING TO
   GROUND
· EXCELLENT PHASE MARGIN ON
    CAPACITIVE LOADS
· STABLE AND LOW OFFSET VOLTAGE
· THREE INPUT OFFSET VOLTAGE
    SELECTIONS



Pinout

  Connection Diagram


Specifications

Symbol Parameter TS27M2C/AC/BC TS27M2I/AI/BI TS27M2M/AM/BM Unit
VCC+ Supply Voltage 1) 18 V
Vid Differential Input Voltage 2) ±18 V
Vi Input Voltage 3) -0.3 to 18 V
Io Output Current for VCC+ 15V ±30 mA
Iin Input Current ±5 mA
Toper Operating Free-Air Temperature Range
0to+70

-40 to +125 -55 to +125 °C
Tstg Storage Temperature Range -65 to +125 °C



Description

These devices of the TS27M2AC are low cost, low power dual oper- ational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process allowing an ex- cellent consumption-speed ratio. These series are ideally suited for low consumption applications.

Three power consumptions of the TS27M2AC are available allowing to have always the best consumption-speed ratio:
   · ICC = 10µA/amp.: TS27L2 (very low power)
   · ICC = 150µA/amp.: TS27M2 (low power)
   · ICC = 1mA/amp.: TS272 (standard)

These CMOS amplifiers of the TS27M2AC offer very high input im- pedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see fig- ure 2).




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