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TS12N30CS

Features: •12A, 30V RDS(ON) =6m·at 4.5 Volts• 12A, 30V Qg = 15nC at 4.5 Volts• Low profile package: less than 1mm height when mounted on PCB•Occupies only 1/3 the area of SO-8.• Excellent thermal characteristics.• High power and current handling capability.̶...

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SeekIC No. : 004528432 Detail

TS12N30CS: Features: •12A, 30V RDS(ON) =6m·at 4.5 Volts• 12A, 30V Qg = 15nC at 4.5 Volts• Low profile package: less than 1mm height when mounted on PCB•Occupies only 1/3 the area of SO-...

TS12N30CS Data Sheet

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Part Number:
TS12N30CS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

•12A, 30V RDS(ON) =6m ·at  4.5 Volts
• 12A, 30V Qg = 15nC  at  4.5 Volts
• Low profile package: less than 1mm height when mounted on PCB
• Occupies only 1/3 the area of SO-8.
• Excellent thermal characteristics.
• High power and current handling capability.
• Lead free solder balls available.




Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±12
V
ID

Drain Current Contious

Pulsed
6
A
25
PD
Power Dissipation (Steady State)
2.2
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150



Description

Taiwan Semiconductor's new low cost, state of the art AceFET™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra- low Qg X RDS(ON) figure of merit of the TS12N30CS.




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