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TS12N20CS

Features: ·12A, 20V RDS(ON)=3.9mΩ at 4.5Volts·12A, 20V Qg=19.8nC at 4.5Volts·Low profile package: less than 1mm height when mounted on PCB·Occupies only 1/3 the area of SO-8· Excellent thermal characteristics· High power and current handling capability· Lead free solder balls availableApplic...

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SeekIC No. : 004528431 Detail

TS12N20CS: Features: ·12A, 20V RDS(ON)=3.9mΩ at 4.5Volts·12A, 20V Qg=19.8nC at 4.5Volts·Low profile package: less than 1mm height when mounted on PCB·Occupies only 1/3 the area of SO-8· Excellent thermal...

TS12N20CS Data Sheet

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Part Number:
TS12N20CS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

·12A, 20V RDS(ON)=3.9mΩ at 4.5Volts
·12A, 20V Qg=19.8nC at 4.5Volts
·Low profile package: less than 1mm
   height when mounted on PCB
·Occupies only 1/3 the area of SO-8
· Excellent thermal characteristics
· High power and current handling
    capability
· Lead free solder balls available


Application

MicroSurf™ for High Frequency DC-DC Converters


Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 20 V
Gate-Source Voltage VGSS +12 V
Drain Current Continuous
Pulsed 		ID 6
25

A

A

Power Dissipation (Steady State) PD 2.2 W
Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 °C



Description

Taiwan Semiconductor's new low cost, state of the art MicroSurf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit of the TS12N20CS.




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