TS128MVSSFDC

Features: Single 2.7V~3.6V supplyOrganization Memory Cell Array : (128M + 4096K)bitx8bit Data Register : (512 + 16)bit x8bit Automatic Program and Erase Page Program : (512 + 16)Byte Block Erase : (16K + 512)Byte 528-Byte Page Read Operation Random Access : 10us(Max.) Serial Page Access : 50ns(Mi...

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SeekIC No. : 004528425 Detail

TS128MVSSFDC: Features: Single 2.7V~3.6V supplyOrganization Memory Cell Array : (128M + 4096K)bitx8bit Data Register : (512 + 16)bit x8bit Automatic Program and Erase Page Program : (512 + 16)Byte Block Erase : ...

floor Price/Ceiling Price

Part Number:
TS128MVSSFDC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/1/11

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Product Details

Description



Features:

Single 2.7V~3.6V supply
Organization
   Memory Cell Array : (128M + 4096K)bitx8bit
   Data Register : (512 + 16)bit x8bit
Automatic Program and Erase
   Page Program : (512 + 16)Byte
   Block Erase : (16K + 512)Byte
528-Byte Page Read Operation
   Random Access : 10us(Max.)
   Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
   Program time : 200us(typ.)
   Block Erase time : 2ms(typ.)
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
   Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
   Endurance : 1M Program/Erase Cycles
   Data Retention : 10 years
Command Register Operation
22 pad SmartMedia TM (SSFDC)



Description

The TS128MVSSFDC is a 128M(134,217,728)x8bit NAND Flash Memory with a spare 4096K(4,194,304)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200us and an erase operation can be performed in typically 2ms on an 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verify and margining of data. Even the write-intensive systems can take advantage of the TS128MVSSFDC's extended reliability of 1,000,000 program/erase cycle by providing either ECC(Error Correction Code) or real time mapping-out algorithm. The TS128MVSSFDC is an optimum solution for large nonvolatile storage applications such as solid state file storage, digital voice recorder, digital still  amera and other portable applications requiring non-volatility.




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