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TRF4002

Features: ·Power Amplifier for 1.9-GHz CDMA Applications·0.5-Micron GaAs MESFET Technology·Operates from 3-V to 3.6-V Supply·High Output Power . . . 27.5-dBm Typical at 3-V Supply and 1.9 GHz· Gain Linearity Better Than 0.5 dB Over a 37-dB Dynamic Range· High Adjacent Channel Power Rejection·20-Pi...

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SeekIC No. : 004528098 Detail

TRF4002: Features: ·Power Amplifier for 1.9-GHz CDMA Applications·0.5-Micron GaAs MESFET Technology·Operates from 3-V to 3.6-V Supply·High Output Power . . . 27.5-dBm Typical at 3-V Supply and 1.9 GHz· Gain ...

TRF4002 Data Sheet

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Part Number:
TRF4002
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Power Amplifier for 1.9-GHz CDMA Applications
·0.5-Micron GaAs MESFET Technology
·Operates from 3-V to 3.6-V Supply
·High Output Power . . . 27.5-dBm Typical at 3-V Supply and 1.9 GHz
· Gain Linearity Better Than 0.5 dB Over a 37-dB Dynamic Range
· High Adjacent Channel Power Rejection
·20-Pin Plastic Surface-Mount TSSOP PWP PowerPAD(PWP)


Pinout

Connection Diagram


Specifications

Supply voltage range, VD1, VD2 (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 5 V
Bias voltage, VGG (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 to 0 V
Input power, RFIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 dBm
Continuous power dissipation at or below TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 W
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30°C to 80°C


† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:
1. VGG = 1 V
2. VD1 = VD2 = 0 V


Description

The TRF4002 personal communications system (PCS) RF power amplifier is a gallium arsenide (GaAs), integrated circuit housed in a 20-pin plastic surface-mount, thin-shrink small outline package (TSSOP). The package has a solderable pad that improves the package thermal performance by bonding the pad to an external thermal plane. The pad of TRF4002 also acts as a low-inductance electrical path-to-ground and must be electrically connected to the printed-circuit board (PCB) ground plane as a continuation of the regular package terminals that are designated GND. The integrated circuit TRF4002 is suitable for 1.9-GHz code-division multiple-access (CDMA) applications.

The TRF4002 is a power amplifier that uses a two-stage topology with an on-/off-chip output inductor and impedance matching network to minimize cost. It is suitable for use in mobile systems that require high linearity. It can deliver 27.5-dBm typical output power optimized for minimum adjacent channel power.




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