Features: • High Density Interconnects:• 3 Global• 1 Local• 9 m Total Thickness• High-Q Passives; >50 @ 2 GHz• 0.6 m Gate Length MESFET Optional: Power & General Purpose D-FETs; E-FET• Schottky-Barrier Diodes• Bulk & Thin Film Resistors...
TQTRp: Features: • High Density Interconnects:• 3 Global• 1 Local• 9 m Total Thickness• High-Q Passives; >50 @ 2 GHz• 0.6 m Gate Length MESFET Optional: Power & G...
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TriQuint's TQTRp process has advanced metal systems and MESFET devices. It is targeted at high performance, small size passive-only or passive/active circuits and utilizes over 9 m of gold metal. High density interconnections are accomplished with three thick global and one surface metal interconnect layers. The four metal layers of TQTRp are encapsulated in a high performance dielectric that allows wiring flexibility and plastic packaging simplicity. Precision NiCr resistors, implanted resistors, and high value MIM capacitors are included. Advanced 0.6 m enhancement/depletion mode MESFET devices include an integrated power MESFET, general purpose D-Mode MESFET, and Enhancement Mode MESFET and are based on the TQTRx process, currently TriQuint's highest volume process. The TQTRp process is available on 150-mm (6 inch) wafers.