Features: • D-Mode, -0.8 V Vp• InGaAs Active Layer pHEMT Process• 0.5 um Optical Lithography Gates• 17 V D-G Breakdown Voltage• High Density Interconnects:• 2 Global• 1 Local• High-Q Passives• Thin Film Resistors• High Value Capacitors...
TQPHT: Features: • D-Mode, -0.8 V Vp• InGaAs Active Layer pHEMT Process• 0.5 um Optical Lithography Gates• 17 V D-G Breakdown Voltage• High Density Interconnects:• 2 Glo...
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TriQuint's 0.5 m pHEMT process is based on our production released 0.25 m gate process. TQPHT substitutes lower cost optical lithography in place of e-beam and adds TriQuint's unique thick metal scheme. This process is targeted for high efficiency and linearity in power amplifiers, low noise amplifiers, and linear, low loss and high isolation RF switch applications. The TQPHT process offers a D-Mode pHEMT with a 0.8 V pinch off. The three metal interconnecting layers are encapsulated in a high performance dielectric that allows wiring flexibility, optimized die size and plastic packaging simplicity. Precision NiCr resistors and high value MIM capacitors of TQPHT are included allowing higher levels of integration, while maintaining smaller, cost effective die sizes.