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TQPED

Features: • E-Mode, 0.35 V, Vth• D-Mode, -0.8 V Vp• InGaAs Active Layer pHEMT Process• 0.5 um Optical Lithography Gates• High Density Interconnects:• 2 Global• 1 Local• High-Q Passives• Thin Film Resistors• High Value Capacitors• Ba...

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SeekIC No. : 004527928 Detail

TQPED: Features: • E-Mode, 0.35 V, Vth• D-Mode, -0.8 V Vp• InGaAs Active Layer pHEMT Process• 0.5 um Optical Lithography Gates• High Density Interconnects:• 2 GlobalR...

TQPED Data Sheet

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Part Number:
TQPED
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

• E-Mode, 0.35 V, Vth
• D-Mode, -0.8 V Vp
• InGaAs Active Layer pHEMT Process
• 0.5 um Optical Lithography Gates
• High Density Interconnects:
• 2 Global
• 1 Local
• High-Q Passives
• Thin Film Resistors
• High Value Capacitors
• Backside Vias Optional
• Based on Production TQPHT pHEMT and Interconnect
• Nominal TOM3 FET Models Available



Application

• Highly Efficient, and Linear Power Amplifiers
• Low Loss, High Isolation, Low- Harmonic Contnt Switches
• Integrated digital control logic for Switches and Transceivers
• Converters
• Integrated RF Front Ends LNA, SW, PA
• Wireless Transceivers, Base stations, Direct Broadcast Satellite Radars, Digital Radios, RF / Mixed Signal ICs
• Power Detectors and Couplers



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