TQP770001

RF Amplifier Bluetooth Two Stage HBT Power Amplifier

product image

TQP770001 Picture
SeekIC No. : 00611568 Detail

TQP770001: RF Amplifier Bluetooth Two Stage HBT Power Amplifier

floor Price/Ceiling Price

US $ .78~1.05 / Piece | Get Latest Price
Part Number:
TQP770001
Mfg:
TriQuint Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.05
  • $1.01
  • $.9
  • $.78
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/7

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Operating Frequency : 2.4 GHz to 2.5 GHz Packaging : Reel    

Description

Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Type :
Packaging : Reel
Operating Frequency : 2.4 GHz to 2.5 GHz


Features:

• InGaP HBT Technology
• Bluetooth v2.0 class 1 systems
• High Efficiency: 50% @ 21.5dBm
• EDR (Enhanced Data Rate) Compliant
• Under EDR modulation, its low AM-AM and AM-PM distortion guarantee high modulation accuracy
• Will operate under Bluetooth FSK, 8DPSK, and Pi/4-DQPSK modulations
• Optimized for 50 ohm System
• Integrated bias controller with a power control (variable gain)  unction
• Small 12-pin QFN, 2x2mm module
• Lead-free 260 RoHS Compliant
• Full ESD Protection



Application

Bluetooth v2.0 + EDR class 1 systems




Pinout

  Connection Diagram


Specifications

Parameter Symbol Min. Max. Units
Power Supply Voltage

Power Supply Voltage
VCC

VCC, RF Applied
-

-
6

5
V

V
Bias and reference Voltage

Bias power control voltage
PA_ON (PA_On = Ven = Venable)

P_C (Vctrl = P_CTRL)
-

-
5

5
V

V
DC Supply current

Storage Temperature
ICC

TSTORAGE
-

-40
250

85
mA

Operating Case Temperature

Maximum input power
TC

PI
-5

-
85

5


dBm



Description

The TQP770001 Bluetooth PA is designed on TriQuint's advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness. The PA TQP770001 is a two-stage design requiring several SMD tuning elements for input and output matching, gain shaping, and bias injection. Features of TQP770001 include an integrated bias controller with a power control (variable gain) function. The bias controller also acts to provide temperature compensation. The PA is housed in a 2.0 mm x 2.0 mm 12 pin STSLP package with a grounded back paddle. A recommended drawing is provided in section 4.3.2. This PA is designed to operate in Bluetooth v2.0 class 1 systems. TQP770001 is also intended to be Enhanced Data Rate (EDR) compliant with Bluetooth v2.0 + EDR specification for both 2 Mbps and 3 Mbps modulation modes.




Parameters:

Technical/Catalog InformationTQP770001
VendorTriquint Semiconductor Inc
CategoryRF and RFID
Package / Case12-QFN
Voltage - Supply3V ~ 3.6V
Current - Supply250mA
Gain27dB
Frequency2.4GHz ~ 2.5GHz
RF TypeBluetooth
PackagingTape & Reel (TR)
Noise Figure-
P1db-
Test Frequency-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TQP770001
TQP770001



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Optoelectronics
Line Protection, Backups
Resistors
Transformers
Boxes, Enclosures, Racks
View more