Features: · High Efficiency· Three quiescent current states· CMOS compatible logic inputs· Excellent ACP and ALT· Small 8 pin 6x6mm module· Internally matched input and output· Full ESD Protection· Low leakage currentApplication· Cellular Band CDMA IS-95/98 based mobile phones.· Single-Mode, Dual ...
TQM7136: Features: · High Efficiency· Three quiescent current states· CMOS compatible logic inputs· Excellent ACP and ALT· Small 8 pin 6x6mm module· Internally matched input and output· Full ESD Protection· ...
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SYMBOL | Parameter | Absolute Maximum Value |
Units |
VCC1, VCC2 | Power Supply Voltage, no RF Applied RF Applied |
-0.5 to 6.0 -0.5 to 5.0 |
VDC |
VREF, VCTRL1, and VCTRL2 |
Bias reference voltages (VREF) and bias control voltage (VCTRL1 and VCTRL2). | -0.5 to 5.0 | VDC |
PDISS | Power Dissipation | 2.5 | W |
TC | Case Temperature, Survival | -40 to +100 | |
TSTG | Storage Temperature | -40 to +150 | |
RFIN | DC Grounded RF input, 50ohm RF impedance | 0 to 0V | VDC |
RFOUT | DC Blocked RF output, 50 ohm RF impedance | -20V to 20V | VDC |
The TQM7136 is a 3V, 2 stage SiGe HBT Power Amplifier Module designed for use in obile phones. Its RF performance meets the requirements for products designed to IS-95/98 standards. The quiescent current of the TQM7136 is set by the base-band processor using two CMOS compatible ICQ control voltages (VCTRL1 and VCTRL2).
Overall current consumption of the TQM7136 is minimized by selecting the lowest ICQ state available for each power output level. RF input and output matching is included within the module; therefore, minimal external circuitry is required.
The TQM7136 gives excellent RF performance with low current consumption resulting in longer talk times in portable applications. The small 6mm square surface mount package is ideal for new generation small and light phones.