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TQHiP

Features: • Power MESFET Process• Interconnects:• 2 Global (one airbridge)• 1 Local• High-Q Passives• Bulk & Thin Film Resistors• Backside Vias Optional• High Volume Production Processes• Validated Models and Design SupportApplication•...

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SeekIC No. : 004527897 Detail

TQHiP: Features: • Power MESFET Process• Interconnects:• 2 Global (one airbridge)• 1 Local• High-Q Passives• Bulk & Thin Film Resistors• Backside Vias Optional...

TQHiP Data Sheet

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Part Number:
TQHiP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

• Power MESFET Process
• Interconnects:
• 2 Global (one airbridge)
• 1 Local
• High-Q Passives
• Bulk & Thin Film Resistors
• Backside Vias Optional
• High Volume Production Processes
• Validated Models and Design Support


Application

• Power Amplifiers
• Switches
• Frequencies thru X-Band
• Base Station Driver Amplifiers
• CATV Line Amplifiers
• Cellular Power Amps, Drivers, Switches


Specifications

Operating Temperature Range -65 to +150 ºC
Capacitor Breakdown Voltage-Typ. 40 V
Min. 25 V



Description

TriQuint's TQHiP process is our robust, high power density MESFET process. It provides a straight-forward, low cost process for a variety of circuits and applications. Its high operating and breakdown voltages make it ideal for wireless or wired infrastructure applications. A thick (4 m) gold airbridge complements of TQHiP the 2 m thick gold global metal and 0.5 m thick gold surface layer for wiring flexibility and interconnect density. Precision NiCr resistors and high value MIM capacitors of TQHiP are included.




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