Features: SpecificationsDescriptionThe TQ8224 is produced by Triquint Semiconductor,inc.It is a SONET/SDH OC48 mux that time0division multiplexes a 16-bit or 8-bit parallel data bus to a serial 2.48832 Gb/s NRZ data stream for transmission through a communications channel.Without any additional am...
TQ8224: Features: SpecificationsDescriptionThe TQ8224 is produced by Triquint Semiconductor,inc.It is a SONET/SDH OC48 mux that time0division multiplexes a 16-bit or 8-bit parallel data bus to a serial 2.48...
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The TQ8224 is produced by Triquint Semiconductor,inc.It is a SONET/SDH OC48 mux that time0division multiplexes a 16-bit or 8-bit parallel data bus to a serial 2.48832 Gb/s NRZ data stream for transmission through a communications channel.Without any additional amplification,the 2.48832 Gb/s output stage can drive either a directly modulated laser or an optical external modulator.Outputs may also be configured to provide standard ECL/PECL levels with excellent rise/fall times.The serial output data stream of TQ8224 is available through rither single-ended or differential pins.Mark/space ratio adjustment allows compensation for asymmetries encountered in optoelectronice.
Features of the TQ8224 can be summarized as:(1)single-chip,8:1 or 16:1, demultiplexer with integrated clocksynthesis and high performance 75 mA/3.75V output driver;(2)output can drive external optical modulator,50 PECL/ECL transmission line,or directly modulated laser without further amplification;(3)output symmetry adjust;(4)selectable internal/external active highspeed 2.48832 GHz clock;(5)SONET/SDH compliant for 2.48832 Gb/s output data rate;(6)integrated PLL with external filter;(7)four output clocks at 311.04,155.52,77.76 and 38.88 MHz;(8)5V single supply;(9)-40 to +125 case operating temperature.
The absolute maximum ratings of the TQ8224 are:(1)supply voltage:GND to 7.0 V;(2)internal VCO supply voltage:Vee-0.5 to Vdd+0.5 V;(3)output stage supply voltage:Vdd-0.5 to Vdd+0.5 V;(4)inputs/outputs:Vee-0.5 to Vdd+0.5 V;(5)storage temperature:-55 to 150;(6)maximum case operating temperature:125;(7)maximum junction temperature:150 and (8)electrostatic discharge(100 pF):1000 V.