Transistors RF Bipolar Power RF Transistor
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Maximum Operating Frequency : | 860 MHz | Collector- Emitter Voltage VCEO Max : | 25 V | ||
Emitter- Base Voltage VEBO : | 3 V | Continuous Collector Current : | 5.2 A | ||
Power Dissipation : | 65 W | Packaging : | Tray |
·Gold Metalization
·Emitter Ballast Resistors
·Internal Input Matching
IC | 2 x 2.6 A |
VCB | 45V |
PDISS |
65 W @ TC = 25 °C |
TJ |
-50 °C to +200 °C |
TSTG | -50 °C to +200 °C |
JC |
2.5°C/W |