TPT5610

The TPT5610 is designed as one kind of TO-92L plastic-encapsulate transistors,the features of it can be summarized as:(1)power dissipation:1 W (Tamb=25);(2)collector current:Icm: -1 A;(3)collector-base voltage:-25 V;(4)operating and storage junction temperature range:-55 to +150.It is produced by Jiangsu changjiang elecrronics technology co.,ltd.

The electrical characteristics(Tamb=25 unless otherwise specified) of the TPT5610 can be summarized as:(1)collector-base breakdown voltage:-25 V;(2)collector-emitter breakdown voltage:-20 V;(3)emitter-base breakdown voltage:-5 V;(4)collector cut-off current:-1 A;(5)emitter cut-off current:-1 A;(6)DC current gain:60 to 240;(6)collector-emitter saturation voltage:-0.5 V;(7)base-emitter voltage:-1 V;(8)transition frequency:350 MHz;(9)collector output capacitance:38 pF.