TPS823

The TPS823 is designed as toshiba photo IC silicon epitaxial planar type which contains a light receivig IC integrating photo diode, amplifier circuit, open collector output circuit, in 1 chip. Output is directly connectable to IC as it changes digitally. When light is received, output becomes low level.

Some absolute maximum ratings of TPS823 have been concluded into several points as follow. (1)Its supply voltage would be 5.5V. (2)Its output voltage would be 5.5V. (3)Its output current would be 50mA. (4)Its output collector power dissipation would be 85mW. (5)Its operating temperature range would be from -25°C to 85°C. (6)Its storage temperature range would be from-40°C to 100°C. (7)Its lead temperature would be 260°C/3s. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some individual electrical characteristics of TPS823 are concluded as follow. (1)Its operating supply voltage would be min 4.5V and typ 5.0V and max 5.5V. (2)Its output current would be typ 0.001uA and max 250uA for high level. (3)Its supply current would be typ 12mA and max 18mA for low level and would be typ 7ma and max 15mA for high level. (4)Its low to high threshold radiant incidence would be typ 26uW and max 60uW. (5)Its switching time would be typ 70ns for propagation delay time low to high and would be typ 80ns for propagation delay time high to low and it would be typ 20ns for rise time and it would be typ 45ns for fall time.

It should be noted that the information contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information of TPS823 please contact us for details. Thank you!