TPS820B

Supply voltage V_CC................................. −0.5~7 V
Output voltage V_O.................................... V_CC V
Light current IL 10............................................. mA
Power dissipation P ...................................250 mW
Power dissipation derating P/°C......−3.33 mW/
Operating temperature range Topr........ −25~85
Storage temperature range Tstg ..........−40~100
Soldering temperature (5 s) (Note1) Tsol ......260

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: At the location of 1.3 mm from the resin package bottom

The TPS820B is a linear output photo-IC (current output type) which incorporates a photodiode and a current amp circuit in a single chip.

The sensitivity of TPS820B is superior to that of a phototransistor and its illuminance output linearity is excellent.

TPS820B features:
• High sensitivity: I_L = 1.5 mA (Min) @E = 0.1 mW/cm2
• Little fluctuation in light current
• Output linearity of illuminance is excellent.
• Low current consumption: I_CC = 1 A (max) at V_CC = 5 V
• Housed in compact side-view epoxy resin package
• Black package impermeable to visible light
• The TPS820 is suitable for use in combination with the TLN117(F) infrared LED lamp whose package size is the same.