TPS807

The TPS807 is a kind of photo IC that integrates a photodiode, amplifier circuit and waveform shaping circuit into a single chip. It is silicon epitaxial planar. The TPS807 is intended for photo interrupter, photoelectric counter as well as position and rotational speed sensor. There are some features of TPS807 as follows: (1)visible light cut resin is used: P=900 nm typ; (2)the same external shape as the infrared LED TLN107A and is best suited for combination with the TLN107A as a photo interrupter; (3)high speed response: tpLH=2s, tpHL=6s typ; (4)when light is received, output becomes high level.

The following is about the maximum ratings of TPS807(Ta=25): (1)supply voltage, VCC: 17 V; (2)high level output voltage, VOH: VCC V; (3)low level output current, IOL: 50 mA; (4)output current derating (Ta>25), IOL/: -0.67 mA/; (5)power dissipation, PO: 250 mW; (6)power dissipation derating (Ta>25), PO/: -3.33 mW/; (7)operating temperature range, Topr: -25 to 85; (8)storage temperature range, Tstg: -40 to 100; (9)soldering temperature (5s), Tsol: 260.

The last one is about the opto-eletrical characteristics of TPS807 (Ta=-30 to 85, VCC=4.5 to 17 V, typical values are all at 25): (1)supply voltage, VCC: 4.5 V min and 17 V max; (2)high level supply current, ICCH: 1.2 mA typ and 3 mA max when VCC=5 V, E=2 mW/cm2; (3)low level supply current, ICCL: 3.0 mA typ and 5.5 mA max when VCC=5 V, E=0; (4)high level output voltage, VOH: 4.5 V min and 5 V typ at VCC=5 V, E=2 mW/cm2; (5)low level output voltage, VOL: 0.07 V typ and 0.4 V max at IOL=16 mA, VCC=5 V, E=0; (6)peak sensitivity wavelength, P: 900 nm typ.