TPS708

DescriptionThe TPS708 is a kind of silicon PN photo diode for photo sensor, optical switch, smoke sensor and position sensor. There are some features of TPS708 as follows: (1)TO-18 metal package; (2)high sensitivity: ISC=1.5A typ; (3)small dark current: ID=10 pA typ; (4)TLN108 (P=940 mm) and TLN20...

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SeekIC No. : 004527257 Detail

TPS708: DescriptionThe TPS708 is a kind of silicon PN photo diode for photo sensor, optical switch, smoke sensor and position sensor. There are some features of TPS708 as follows: (1)TO-18 metal package; (2...

floor Price/Ceiling Price

Part Number:
TPS708
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Description

The TPS708 is a kind of silicon PN photo diode for photo sensor, optical switch, smoke sensor and position sensor. There are some features of TPS708 as follows: (1)TO-18 metal package; (2)high sensitivity: ISC=1.5A typ; (3)small dark current: ID=10 pA typ; (4)TLN108 (P=940 mm) and TLN201 (P=880 mm) are available as high radiant power infrared LEDs for a light source.

What comes next is about the maximum ratings of TPS708 (Ta=25): (1)reverse voltage, VR: 30 V; (2)power dissipation, PD: 100 mW; (3)operating temperature range, Topr: -40 to 125; (4)storage temperature, Tstg: -55 to 150.

The following is about the electrical characteristics of TPS708 (Ta=25): (1)dark current, ID: 0.01 nA typ and 60 nA max at VR=10 V, E=0; (2)short circuit current, ISC: 1.0A min and 1.5A typ at E=0.1 mW/cm2; (3)peak sensitivity wavelength, P: 850 nm typ; (4)half value width, 1/2: ±15° typ; (5)capacitance, CT: 50 pF typ at VR=10 V, f=1 MHz; (6)switching time: rise time, tr: 100 ns typ at VR=10 V, RL=1 k; fall time, tf: 4 ns typ at VR=10 V, RL=1 k.




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