DescriptionThe TPS708 is a kind of silicon PN photo diode for photo sensor, optical switch, smoke sensor and position sensor. There are some features of TPS708 as follows: (1)TO-18 metal package; (2)high sensitivity: ISC=1.5A typ; (3)small dark current: ID=10 pA typ; (4)TLN108 (P=940 mm) and TLN20...
TPS708: DescriptionThe TPS708 is a kind of silicon PN photo diode for photo sensor, optical switch, smoke sensor and position sensor. There are some features of TPS708 as follows: (1)TO-18 metal package; (2...
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The TPS708 is a kind of silicon PN photo diode for photo sensor, optical switch, smoke sensor and position sensor. There are some features of TPS708 as follows: (1)TO-18 metal package; (2)high sensitivity: ISC=1.5A typ; (3)small dark current: ID=10 pA typ; (4)TLN108 (P=940 mm) and TLN201 (P=880 mm) are available as high radiant power infrared LEDs for a light source.
What comes next is about the maximum ratings of TPS708 (Ta=25): (1)reverse voltage, VR: 30 V; (2)power dissipation, PD: 100 mW; (3)operating temperature range, Topr: -40 to 125; (4)storage temperature, Tstg: -55 to 150.
The following is about the electrical characteristics of TPS708 (Ta=25): (1)dark current, ID: 0.01 nA typ and 60 nA max at VR=10 V, E=0; (2)short circuit current, ISC: 1.0A min and 1.5A typ at E=0.1 mW/cm2; (3)peak sensitivity wavelength, P: 850 nm typ; (4)half value width, 1/2: ±15° typ; (5)capacitance, CT: 50 pF typ at VR=10 V, f=1 MHz; (6)switching time: rise time, tr: 100 ns typ at VR=10 V, RL=1 k; fall time, tf: 4 ns typ at VR=10 V, RL=1 k.