DescriptionThe TPS625 is a kind of photo darlington transistor. It is silicon NPN epitaxial planar. The device is intended for opto-electronic switch, home eletric equipment and OA equipment. There are some features of TPS625as follows: (1)small side view epoxy resin package; (2)high sensitivity: ...
TPS625: DescriptionThe TPS625 is a kind of photo darlington transistor. It is silicon NPN epitaxial planar. The device is intended for opto-electronic switch, home eletric equipment and OA equipment. There ...
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The TPS625 is a kind of photo darlington transistor. It is silicon NPN epitaxial planar. The device is intended for opto-electronic switch, home eletric equipment and OA equipment. There are some features of TPS625 as follows: (1)small side view epoxy resin package; (2)high sensitivity: IL=0.6 mA min; (3)half value angle: 1/2=±15°typ; (4)optimum in combination with infrared LED TLN117 which has identical external dimensions; (5)visible light cut type (black package).
What comes next is about the maximum ratings of TPS625 (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 40 mA; (4)collector power dissipation, PC: 75 mW; (5)operating temperature range, Topr: -25 to 85; (6)storage temperature, Tstg: -40 to 100; (7)soldering temperature (5s): 260.
The following is about the electrical characteristics of TPS625 (Ta=25): (1)dark current, ID (ICEO): 0.03A typ and 0.25A at VCE=16 V, E=0; (2)light current, IL(IC): 0.6 mA min and 2 mA typ at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.9 V typ and 1.2 V max at IL=0.3 mA, E=0.1 mW/cm2; (4)switching time: rise time, tr: 200s typ at VCC=5 V, IC=10 mA, RL=100; fall time, tf: 150s typ at VCC=5 V, IC=10 mA, RL=100; (5)peak sensitivity wavelength, P: 820 nm typ; (6)half value angle, 1/2: ±15°typ.