TPS617

The TPS617 is a kind of photo transistor. It is silicon NPN epitaxial planar. The TPS617 is intended for photo interrupter, photoelectric counter, position detection as well as automatic control unit. There are some features of TPS617 as follows: (1)high sensitivity: IL=1.4 mA typ; (2)the same external shaped as the infrared LED TLN107A, and is best suited for combination with TLN107A as a photo interrupter; (3)visible light cut type (black package); (4)maximum distance when used as a photo sensor: TLN107A at DC drive40 mm when TPS617 IL350A.

What comes next is about the maximum ratings of TPS617 (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 50 mA; (4)collector power dissipation, PC: 75 mW; (5)operating temperature range, Topr: -25 to 85; (6)storage temperature, Tstg: -40 to 100.

The following is about the electrical characteristics of TPS617(Ta=25): (1)dark current, ID (ICEO): 0.03A typ and 0.25A at VCE=16 V, E=0; (2)light current, IL(IC): 0.4A min and 1.4A typ at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.9 V typ and 1.2 V max at IC=0.2mA, E=0.1 mW/cm2; (4)switching time: rise time, tr: 200s typ at VCC=5 V, IC=10 mA, RL=100; fall time, tf: 100s typ at VCC=5 V, IC=10 mA, RL=100; (5)peak sensitivity wavelength, P: 870 nm typ; (6)half value angle, 1/2: ±15°typ.