DescriptionThe TPS616 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for floppy disk drive, VCR, position detector of home electric equipment and opto-electronic switch. There are some features of TPS616as follows: (1)3.1mm epoxy resin package (black); (2...
TPS616: DescriptionThe TPS616 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for floppy disk drive, VCR, position detector of home electric equipment and opto-elec...
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The TPS616 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for floppy disk drive, VCR, position detector of home electric equipment and opto-electronic switch. There are some features of TPS616 as follows: (1)3.1mm epoxy resin package (black); (2)light current: IL=10A (min) at E=0.1 mW/cm2; (3)half value angle: 1/2=±30°typ; (4)protected from external light by black mold packaging.
What comes next is about the maximum ratings of TPS616 (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 20 mA; (4)collector power dissipation, PC: 75 mW; (5)operating temperature range, Topr: -30 to 85; (6)storage temperature, Tstg: -30 to 100.
The following is about the electrical characteristics of TPS616 (Ta=25): (1)dark current, ID (ICEO): 0.01A typ and 0.1A at VCE=24 V; (2)light current, IL(IC): 10A min and 75A max at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.2 V typ and 0.4 V max at IC=5A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 9s typ at VCC=10 V, IC=1 mA, RL=1k; fall time, tf: 10s typ at VCC=10 V, IC=1 mA, RL=1k; (5)peak sensitivity wavelength, P: 900 nm typ; (6)half value angle, 1/2: ±30°typ.