TPS615

DescriptionThe TPS615 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for floppy disk drive, VCR, position detector of home electric equipment, stroboscope and opto-electronic switch. There are some features of TPS615as follows: (1)3.1mm epoxy resin packag...

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SeekIC No. : 004527094 Detail

TPS615: DescriptionThe TPS615 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for floppy disk drive, VCR, position detector of home electric equipment, stroboscope ...

floor Price/Ceiling Price

Part Number:
TPS615
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Description

The TPS615 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for floppy disk drive, VCR, position detector of home electric equipment, stroboscope and opto-electronic switch. There are some features of TPS615 as follows: (1)3.1mm epoxy resin package; (2)light current: IL=20A (min) at E=0.1 mW/cm2; (3)half value angle: 1/2=±30°typ.

What comes next is about the maximum ratings of TPS615 (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 20 mA; (4)collector power dissipation, PC: 75 mW; (5)operating temperature range, Topr: -30 to 85; (6)storage temperature, Tstg: -30 to 100.

The following is about the electrical characteristics of TPS615 (Ta=25): (1)dark current, ID (ICEO): 0.01A typ and 0.1A at VCE=24 V; (2)light current, IL(IC): 20A min and 150A max at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.2 V typ and 0.4 V max at IC=10A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 9s typ at VCC=10 V, IC=1 mA, RL=1k; fall time, tf: 10s typ at VCC=10 V, IC=1 mA, RL=1k; (5)peak sensitivity wavelength, P: 800 nm typ; (6)half value angle, 1/2: ±30°typ.




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