TPS614

The TPS614 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for photo sensor, photoelectrical counter, various kinds of readers and position detection. There are some features of TPS614 as follows: (1)TO-18 metal package; (2)high sensitivity: IL=1.5 mA typ; (3)wide half value angle facilitates mechanical design: 1/2=±42°typ; (4)countermeasure against disturbance light, improvement of response speed and enable operation can be taked by use of the base pin. aviod the use of TPS614 with the base pin kept open; (5)TLN108, TLN201, etc are available as the recommended infrared LEDs.

What comes next is about the maximum ratings of TPS614(Ta=25): (1)collector-emitter voltage, VCEO: 40 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 50 mA; (4)collector power dissipation, PC: 150 mW; (5)operating temperature range, Topr: -40 to 125; (6)storage temperature, Tstg: -55 to 150.

The following is about the electrical characteristics of TPS614 (Ta=25): (1)dark current, ID (ICEO): 0.01A typ and 0.2A at VCE=30 V, E=0; (2)light current, IL(IC): 0.6 mA min and 1.5 mA typ at VCE=3 V, E=10 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.25 V typ and 0.4 V max at IC=0.3 mA, E=10 mW/cm2; (4)switching time: rise time, tr: 2s typ at VCC=5 V, IC=10 mA, RL=100; fall time, tf: 2s typ at VCC=5 V, IC=10 mA, RL=100; (5)peak sensitivity wavelength, P: 800 nm typ; (6)half value angle, 1/2: ±42°typ.