TPS613

The TPS613 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for photo sensor, photoelectric counter, floppy disk drive, position detection, controller of home electric equipment and detector for stroboscopic control. There are some features of TPS613 as follows: (1)3mm epoxy resin package; (2)about medium sensitivity; (3)half value angle: 1/2=±30°typ; (4)the same size TLN113 is available as infrared LED.

What comes next is about the maximum ratings of TPS613 (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 20 mA; (4)collector power dissipation, PC: 75 mW; (5)operating temperature range, Topr: -20 to 75; (6)storage temperature, Tstg: -30 to 100.

The following is about the electrical characteristics of TPS613 (Ta=25): (1)dark current, ID (ICEO): 0.01A typ and 0.1A at VCE=10 V, E=0; (2)light current, IL(IC): 20A min and 260A max at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.2 V typ and 0.4 V max at IC=7A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 4s typ at VCC=10 V, IC=1 mA, RL=100; fall time, tf: 3s typ at VCC=10 V, IC=1 mA, RL=100; (5)peak sensitivity wavelength, P: 720 nm typ; (6)half value angle, 1/2: ±30°typ.