TPS611

The TPS611 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for photo sensor, photoelectric counter, various kinds of readers and position detection. There are some features of TPS611 as follows: (1)5mm epoxy resin package (black); (2)high sensitivity: IL=120A typ; (3)half value angle: 1/2=±8°typ; (4)the TLN110 in the same size and TLN205 in the similar external size are available as infrared LEDs; (5)protected from external light by black mold packaging.

What comes next is about the maximum ratings of TPS611 (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 50 mA; (4)collector power dissipation, PC: 150 mW; (5)operating temperature range, Topr: -20 to 75; (6)storage temperature, Tstg: -30 to 100.

The following is about the electrical characteristics of TPS611 (Ta=25): (1)dark current, ID (ICEO): 0.005A typ and 0.1A at VCE=24 V, E=0; (2)light current, IL(IC): 30A min and 120A typ at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.25 V typ and 0.4 V max at IC=15A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 6s typ at VCC=5 V, IC=2 mA, RL=100; fall time, tf: 6s typ at VCC=5 V, IC=2 mA, RL=100; (5)peak sensitivity wavelength, P: 900 nm typ; (6)half value angle, 1/2: ±8°typ.