TPS610

The TPS610 is a kind of photo transistor. It is silicon NPN epitaxial planar. The device is intended for photo sensor, photoelectric counter, various kinds of readers and position detection. There are some features of TPS610 as follows: (1)5mm epoxy resin package; (2)high sensitivity: IL=250A typ; (3)half value angle: 1/2=±8°typ; (4)the TLN110 in the same size and TLN205 in the similar external size are available as infrared LEDs.

What comes next is about the maximum ratings of TPS610 (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 50 mA; (4)collector power dissipation, PC: 150 mW; (5)operating temperature range, Topr: -25 to 75; (6)storage temperature, Tstg: -30 to 100.

The following is about the electrical characteristics of TPS610 (Ta=25): (1)dark current, ID (ICEO): 0.005A typ and 0.1A at VCE=24 V, E=0; (2)light current, IL(IC): 100A min and 250A typ at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.25 V typ and 0.4 V max at IC=50A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 6s typ at VCC=5 V, IC=2 mA, RL=100; fall time, tf: 6s typ at VCC=5 V, IC=2 mA, RL=100; (5)peak sensitivity wavelength, P: 800 nm typ; (6)half value angle, 1/2: ±8°typ.