DescriptionThe TPS607A is a kind of photo darlington transisitor. It is silicon NPN epitaxial planar. The device is designed for photo interrupter, photoelectric counter, position detection and automatic control unit. There are some features of TPS607Aas follows: (1)high sensitivity: IL=2 mA; (2)t...
TPS607A: DescriptionThe TPS607A is a kind of photo darlington transisitor. It is silicon NPN epitaxial planar. The device is designed for photo interrupter, photoelectric counter, position detection and auto...
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The TPS607A is a kind of photo darlington transisitor. It is silicon NPN epitaxial planar. The device is designed for photo interrupter, photoelectric counter, position detection and automatic control unit. There are some features of TPS607A as follows: (1)high sensitivity: IL=2 mA; (2)the same external shape as the infared LED TLN107A, and is best suited for combination with TLN107A as a photo interrupter; (3)maximum distance when used as a photo sensor: TLN107A at DC drive40 mm when TPS607A IL500A.
What comes next is about the maximum ratings of TPS607A (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 50 mA; (4)collector power dissipation, PC: 75 mW; (5)operating temperature range, Topr: -25 to 85; (6)storage temperature, Tstg: -40 to 100.
The following is about the electrical characteristics of TPS607A (Ta=25): (1)dark current, ID (ICEO): 0.03A typ and 0.25A at VCE=16 V, E=0; (2)light current, IL(IC): 0.6 mA min and 2 mA typ at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.9 V typ and 1.2 V max at IC=0.3 mA, E=0.1 mW/cm2; (4)switching time: rise time, tr: 200s typ at VCC=5 V, IC=10 mA, RL=100; fall time, tf: 150s typ at VCC=5 V, IC=10 mA, RL=100; (5)peak sensitivity wavelength, P: 720 nm typ; (6)half value angle, 1/2: ±15°typ.