DescriptionThe TPS606 is a kind of photo transisitor. It is silicon NPN epitaxial planar. The device is designed for tape, card readers, printer, terminal and opto-electronic switch. There are some features of TPS606as follows: (1)micro-package (epoxy resin package): double end type (TPS606) and D...
TPS606: DescriptionThe TPS606 is a kind of photo transisitor. It is silicon NPN epitaxial planar. The device is designed for tape, card readers, printer, terminal and opto-electronic switch. There are some ...
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The TPS606 is a kind of photo transisitor. It is silicon NPN epitaxial planar. The device is designed for tape, card readers, printer, terminal and opto-electronic switch. There are some features of TPS606 as follows: (1)micro-package (epoxy resin package): double end type (TPS606) and DIP type (TPS606(LB)); (2)high speed response: tr=2s, tf=3s typ; (3)half value angle: 1/2: ±20°typ; (3)mountable at a 2.5mm pitch; (5)maximum distance when used as an optical switch TLN104 at DC drive 5 mm at TPS606 IL100A.
What comes next is about the maximum ratings of TPS606 (Ta=25): (1)collector-emitter voltage, VCEO: 30 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 40 mA; (4)collector power dissipation, PC: 75 mW; (5)operating temperature range, Topr: -25 to 85; (6)storage temperature, Tstg: -30 to 100; (7)soldering temperature (3s), Tsol: 260.
The following is about the electrical characteristics of TPS606 (Ta=25): (1)dark current, ID (ICEO): 0.01A typ and 0.1A at VCE=10 V, E=0; (2)light current, IL(IC): 10A min and 40A typ at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.2 V typ and 0.4 V max at IC=2A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 2s typ at VCC=10 V, IC=1 mA, RL=100; fall time, tf: 3s typ at VCC=10 V, IC=1 mA, RL=100; (5)peak sensitivity wavelength, P: 720 nm typ; (6)half value angle, 1/2: ±20° typ.