DescriptionThe TPS604 is a kind of photo transisitor. It is silicon NPN epitaxial planar. The device is designed for photo sensor, photoelectrical counter, position detection and various kinds of readers. There are some features of TPS604as follows: (1)TO-18 metal package; (2)high sensitivity; (3)...
TPS604: DescriptionThe TPS604 is a kind of photo transisitor. It is silicon NPN epitaxial planar. The device is designed for photo sensor, photoelectrical counter, position detection and various kinds of re...
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Power Management IC Development Tools 2 batt cells
The TPS604 is a kind of photo transisitor. It is silicon NPN epitaxial planar. The device is designed for photo sensor, photoelectrical counter, position detection and various kinds of readers. There are some features of TPS604 as follows: (1)TO-18 metal package; (2)high sensitivity; (3)sharp directivity. Incident light can be effectively used: 1/2: ±10°typ; (4)countermeasure against disturbance light, improvement of reponse speed and enable operation can be taken by use of the base pin. Avoid the use of TPS604 with the base pin kept open.
What comes next is about the maximum ratings of TPS604 (Ta=25): (1)collector-emitter voltage, VCEO: 40 V; (2)collector-base voltage, VCBO: 50 V; (3)emitter-base voltage, VEBO: 5 V; (4)emitter-collector voltage, VECO: 5 V; (5)collector current, IC: 50 mA; (6)collector power dissipation, PC: 150 mW; (7)operating temperature range, Topr: -40 to 125; (8)storage temperature, Tstg: -55 to 100.
The following is about the electrical characteristics of TPS604 (Ta=25): (1)dark current, ID (ICEO): 0.01A typ and 0.2A at VCE=30 V, E=0; (2)light current, IL(IC): 60A min and 200A typ at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.25 V typ and 0.4 V max at IC=30A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 2s typ at VCC=10 V, IC=1 mA, RL=100; fall time, tf: 2s typ at VCC=10 V, IC=10 mA, RL=100; (5)peak sensitivity wavelength, P: 800 nm typ; (6)half value angle, 1/2: ±10° typ.