TPS603A

The TPS603A is a kind of photo transisitor. It is silicon NPN epitaxial planar. The device is designed for photo sensor, photoelectrical counter, position detection and various kinds of readers. There are some features of TPS603A as follows: (1)3mm resin package; (2)wide half value angle facilitates setting: 1/2=±55°typ; (4)the same size TLN103A is available as an infared LED.

What comes next is about the maximum ratings of TPS603A (Ta=25): (1)collector-emitter voltage, VCEO: 20 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 20 mA; (4)collector power dissipation, PC: 75 mW; (5)operating temperature range, Topr: -20 to 75; (6)storage temperature, Tstg: -30 to 100.

The following is about the electrical characteristics of TPS603A (Ta=25): (1)dark current, ID (ICEO): 0.01A typ and 0.1A at VCE=10 V, E=0; (2)light current, IL(IC): 6A min and 20A typ at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.2 V typ and 0.4 V max at IC=1A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 9s typ at VCC=10 V, IC=1 mA, RL=1 k; fall time, tf: 10s typ at VCC=10 V, IC=1 mA, RL=1 k; (5)peak sensitivity wavelength, P: 720 nm typ; (6)half value angle, 1/2: ±55° typ.