DescriptionThe TPS601A is a kind of photo transisitor. It is silicon NPN epitaxial planar. The TPS601A is designed for photo sensor, photoelectrical counter, position detection and various kinds of readers. There are some features as follows: (1)TO-18 metal package; (2)high sensitivity; (3)sharp d...
TPS601A: DescriptionThe TPS601A is a kind of photo transisitor. It is silicon NPN epitaxial planar. The TPS601A is designed for photo sensor, photoelectrical counter, position detection and various kinds of ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
US $33.48 - 33.48 / Piece
Power Management IC Development Tools 2 batt cells
The TPS601A is a kind of photo transisitor. It is silicon NPN epitaxial planar. The TPS601A is designed for photo sensor, photoelectrical counter, position detection and various kinds of readers. There are some features as follows: (1)TO-18 metal package; (2)high sensitivity; (3)sharp directivity. Incident light can be effectively used: 1/2=±10°typ; (4)the same size TPS604 with the base pin is available.
What comes next is about the maximum ratings of TPS601A (Ta=25): (1)collector-emitter voltage, VCEO: 40 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 50 mA; (4)collector power dissipation, PC: 150 mW; (5)operating temperature range, Topr: -40 to 125; (6)storage temperature, Tstg: -55 to 150.
The following is about the electrical characteristics of TPS601A (Ta=25): (1)dark current, ID (ICEO): 0.01A typ and 0.2A at VCE=30 V, E=0; (2)light current, IL: 100A min at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.25 V typ and 0.4 V max at IC=30A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 2s typ at VCC=5 V, IC=10 mA, RL=100; fall time, tf: 2s typ at VCC=5 V, IC=10 mA, RL=100; (5)peak sensitivity wavelength, P: 800 nm typ; (6)half value angle, 1/2: ±10° typ.