TPS601A

DescriptionThe TPS601A is a kind of photo transisitor. It is silicon NPN epitaxial planar. The TPS601A is designed for photo sensor, photoelectrical counter, position detection and various kinds of readers. There are some features as follows: (1)TO-18 metal package; (2)high sensitivity; (3)sharp d...

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SeekIC No. : 004526980 Detail

TPS601A: DescriptionThe TPS601A is a kind of photo transisitor. It is silicon NPN epitaxial planar. The TPS601A is designed for photo sensor, photoelectrical counter, position detection and various kinds of ...

floor Price/Ceiling Price

Part Number:
TPS601A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Description

The TPS601A is a kind of photo transisitor. It is silicon NPN epitaxial planar. The TPS601A is designed for photo sensor, photoelectrical counter, position detection and various kinds of readers. There are some features as follows: (1)TO-18 metal package; (2)high sensitivity; (3)sharp directivity. Incident light can be effectively used: 1/2=±10°typ; (4)the same size TPS604 with the base pin is available.

What comes next is about the maximum ratings of TPS601A (Ta=25): (1)collector-emitter voltage, VCEO: 40 V; (2)emitter-collector voltage, VECO: 5 V; (3)collector current, IC: 50 mA; (4)collector power dissipation, PC: 150 mW; (5)operating temperature range, Topr: -40 to 125; (6)storage temperature, Tstg: -55 to 150.

The following is about the electrical characteristics of TPS601A (Ta=25): (1)dark current, ID (ICEO): 0.01A typ and 0.2A at VCE=30 V, E=0; (2)light current, IL: 100A min at VCE=3 V, E=0.1 mW/cm2; (3)collector-emitter saturation voltage, VCE(sat): 0.25 V typ and 0.4 V max at IC=30A, E=0.1 mW/cm2; (4)switching time: rise time, tr: 2s typ at VCC=5 V, IC=10 mA, RL=100; fall time, tf: 2s typ at VCC=5 V, IC=10 mA, RL=100; (5)peak sensitivity wavelength, P: 800 nm typ; (6)half value angle, 1/2: ±10° typ.




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