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TPIC5423L

PinoutSpecificationsDrain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 VSource-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 VDrain-to-GND voltage...

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SeekIC No. : 004526392 Detail

TPIC5423L: PinoutSpecificationsDrain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 VSource-to-GND voltage . . . . . . . . . . . . . . ...

TPIC5423L Data Sheet

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Part Number:
TPIC5423L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

Drain-to-source voltage, VDS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .60 V
Source-to-GND voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 V
Drain-to-GND voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .100 V
Gate-to-source voltage range, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 V to 18 V
Continuous drain current, each output, TC = 25  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .1.25 A
Continuous source-to-drain diode current, TC = 25   . . . . . . . . . . . . . . . . . . . . . . . . . . .  .1.25 A
Pulsed drain current, each output, Imax, TC = 25  (see Note 1 and Figure 15)  . . . . . . .  . . .4 A
Continuous gate-to-source zener-diode current, TC = 25  . . . . . . . . . . . . . . . . . . . . . . .±50 mA
Pulsed gate-to-source zener-diode current, TC = 25  . . . . . . . . . . . . . . . . . . . . . . . . . .±500 mA
Single-pulse avalanche energy, EAS, TC = 25  (see Figures 4 and 16) . . . . . . . . . . . . . . . .96 mJ
Continuous total dissipation, TC = 25  (see Figure 15)  . . . . . . . . . . . . . . . . . . . . . . .. . . .1.39 W
Operating virtual junction temperature range, TJ  . . . . . . . . . . . . . . . . . . . . . . . .  .40  to 150
Operating case temperature range, TC  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40  to 125
Storage temperature range  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65  to 150
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . .260 

NOTE 1: Pulse duration = 10 ms, duty cycle = 2%


Description

The TPIC5423L is a monolithic gate-protected logic-level power DMOS array that consists of four electrically isolated independent N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These TPIC5423L zener diodes also provide up to 4000 V of ESD protection when tested using the humanbody model of a 100-pF capacitor in series with a 1.5-kW resistor.

The TPIC5423L is offered in a 24-pin wide-body surface-mount (DW) package and is characterized for
operation over the case temperature of 40°C to 125°C.




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