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TPIC5403

PinoutSpecificationsDrain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .60 VSource-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 VDrain-to-GND voltage . . . . . ...

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SeekIC No. : 004526389 Detail

TPIC5403: PinoutSpecificationsDrain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .60 VSource-to-GND voltage . . . . . . . . . . . . . . . . ....

TPIC5403 Data Sheet

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Part Number:
TPIC5403
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

Drain-to-source voltage, VDS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . .. .60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 100 V
Drain-to-GND voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 V
Gate-to-source voltage range, VGS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 V to 18 V
Continuous drain current, each output, TC = 25  . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 2.25 A
Continuous source-to-drain diode current, TC = 25   . . . . . . . . . . . . . . . . . . . . . . . . . .2.25 A
Pulsed drain current, each output, Imax, TC = 25  (see Note 1 and Figure 15) . . . .  .11.25 A
Continuous gate-to-source zener diode current, TC = 25 . . . . . . . . . . . . . . . . . . . . . ±50 mA
Pulsed gate-to-source zener diode current, TC = 25  . . . . . . . . . . . . . . . . . . . . . . . .±500 mA
Single-pulse avalanche energy, EAS, TC = 25  (see Figures 4, 15, and 16) . . . . . . . . .17.2 mJ
Continuous total power dissipation, TC = 25  (see Figure 15)  . . . . . . . . . . . . . . . . . . .1.39 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . .  40  to 150
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40  to 125 
Storage temperature range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65  to 150
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  . . . . . . . . . . . . . . . . . . .. .260

NOTE 1: Pulse duration = 10 ms, duty cycle = 2%


Description

The TPIC5403 is a monolithic gate-protected power DMOS array that consists of four independent electrically isolated N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series with a 1.5-kW resistor.

The TPIC5403 is offered in a 24-pin wide-body surface-mount (DW) package and is characterized for operation over the case temperature range of 40°C to 125°C.




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