TPIC5302

Features: • Low rDS(on) . . . 0.3 Typ• High-Voltage Outputs . . . 60 V• Pulsed Current . . . 7 A Per Channel• Fast Commutation SpeedPinoutSpecificationsDrain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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TPIC5302 Picture
SeekIC No. : 004526384 Detail

TPIC5302: Features: • Low rDS(on) . . . 0.3 Typ• High-Voltage Outputs . . . 60 V• Pulsed Current . . . 7 A Per Channel• Fast Commutation SpeedPinoutSpecificationsDrain-to-source volta...

floor Price/Ceiling Price

Part Number:
TPIC5302
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

• Low rDS(on) . . . 0.3 Typ
• High-Voltage Outputs . . . 60 V
• Pulsed Current . . . 7 A Per Channel
• Fast Commutation Speed



Pinout

  Connection Diagram


Specifications

Drain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 V
Drain-to-GND voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 V
Gate-to-source voltage, VGS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .±20 V
Continuous drain current, each output, all outputs on, TC = 25°C  . . . . . . . . . . . . . . . . . . . .. . .1.4 A
Continuous source-to-drain diode current  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.4 A
Pulsed drain current, each output, TC = 25°C (see Note 1 and Figure 6) . . . . . . . . . . . . . . . . . . .7 A
Single-pulse avalanche energy, EAS, TC = 25°C (see Figure 4)  . . . . . . . . . . . . . . . . . . . . . . .10.5 mJ
Continuous total power dissipation at (or below) TC = 25°C  . . . . . . . . . . . . . . . . . . .  . . . .1087 mW
Operating virtual junction temperature range, TJ  . . . . . . . . . . . . . . . . . . . . . . . .     .40°C to 150°C
Operating case temperature range, TC  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  . . .40°C to 125°C
Storage temperature range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  . . . . . . . . . . . . . . . . . . . . . . .260°C



Description

The TPIC5302 is a monolithic power DMOS array that consists of three electrically isolated independent N-channel enhancement-mode DMOS transistors. The TPIC5302 is offered in a standard 16-pin small-outline surface-mount (D)package.

The TPIC5302 is characterized for operation over the case temperature range of 40°C to 125°C.




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