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TPIC5223L

PinoutSpecificationsDrain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 VSource-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .100 VDrain-to-GND voltage . . . . ...

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SeekIC No. : 004526383 Detail

TPIC5223L: PinoutSpecificationsDrain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 VSource-to-GND voltage . . . . . . . . . . . . . . . . ...

TPIC5223L Data Sheet

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Part Number:
TPIC5223L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

Drain-to-source voltage, VDS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 V
Source-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . 100 V
Drain-to-GND voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 V
Gate-to-source voltage range, VGS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 V to 18 V
Continuous drain current, each output, TC = 25    . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . .1 A
Continuous source-to-drain diode current, TC = 25   . . . . . . . . . . . . . . . . . . . . . . . . .  . . .1 A
Pulsed drain current, each output, Imax, TC = 25   (see Note 1 and Figure 15) . . . . . . . . 3 A
Continuous gate-to-source zener diode current, TC = 25   . . . . . . . . . . . . . . . . . . . . ±50 mA
Pulsed gate-to-source zener-diode current, TC = 25   . . . . . . . . . . . . . . . . . . . . . .  .±500 mA
Single-pulse avalanche energy, EAS, TC = 25   (see Figures 4 and 16) . . . . . . . . . . . . 108 mJ
Continuous total power dissipation, TC = 25   (see Figure 15) . . . . . . . . . . . . . . . . .  . 0.95 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . .40   to 150  
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40   to 125 
Storage temperature range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65   to 150 
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  . . . . . . . . . . . . . . . . . . . . .260 

NOTE 1: Pulse duration = 10 ms, duty cycle = 2%


Description

The TPIC5223L is a monolithic gate-protected logic-level power DMOS array that consists of two electrically isolated independent N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series with a 1.5-kW resistor.

The TPIC5223L is offered in a standard eight-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature of 40°C to 125°C.




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