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TPIC5203

PinoutSpecificationsDrain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 VSource-to-GND voltage (Q1, Q2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100 VDrain-to-GND voltage (Q1,...

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SeekIC No. : 004526382 Detail

TPIC5203: PinoutSpecificationsDrain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 VSource-to-GND voltage (Q1, Q2) . . . . . . . . . ....

TPIC5203 Data Sheet

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Part Number:
TPIC5203
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

Drain-to-source voltage, VDS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . . .60 V
Source-to-GND voltage (Q1, Q2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 V
Drain-to-GND voltage (Q1, Q2)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . .100 V
Gate-to-source voltage range, VGS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .9 V to 18 V
Continuous drain current, each output, TC = 25  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .1.6 A
Continuous source-to-drain diode current, TC = 25  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.6 A
Pulsed drain current, each output, Imax, TC = 25 (see Note 1 and Figure 15)  . . . . . . . . . . .8 A
Continuous gate-to-source zener diode current, TC = 25 . . . . . . . . . . . . . . . . . . . . . . . .±50 mA
Pulsed gate-to-source zener-diode current, TC = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . .±500 mA
Single-pulse avalanche energy, EAS, TC = 25 (see Figures 4, 15, and 16) . . . . . . . . . . . .21.6 mJ
Continuous total dissipation, TC = 25 (see Figure 15) . . . . . . . . . . . . . . . . . . . . . . . . .  . .962 mW
Operating virtual junction temperature range, TJ  . . . . . . . . . . . . . . . . . . . . . . . . . . .40 to 150
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40 to 125
Storage temperature range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .65 to 150
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . .  . .. . . .260

NOTE 1: Pulse duration = 10 ms, duty cycle = 2%


Description

The TPIC5203 is a monolithic gate-protected power DMOS array that consists of two independent electrically isolated N-channel enhancement-mode DMOS transistors. Each transistor features integrated high-current zener diodes (ZCXa and ZCXb) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series with a 1.5-kW resistor.

The TPIC5203 is offered in a standard eight-pin small-outline surface-mount (D) package and is characterized for operation over the case temperature range of 40°C to 125°C.




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