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TPIC2601

Features: Low rDS(on) . . . 0.25 TypHigh Output Voltage . . . 60 VPulsed Current . . . 10 A Per ChannelAvalanche Energy Capability . . . 105 mJInput Transient Protection . . . 2000 VPinoutSpecificationsDrain-to-source voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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SeekIC No. : 004526363 Detail

TPIC2601: Features: Low rDS(on) . . . 0.25 TypHigh Output Voltage . . . 60 VPulsed Current . . . 10 A Per ChannelAvalanche Energy Capability . . . 105 mJInput Transient Protection . . . 2000 VPinoutSpecifica...

TPIC2601 Data Sheet

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Part Number:
TPIC2601
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Low rDS(on) . . . 0.25 Typ
 High Output Voltage . . . 60 V
 Pulsed Current . . . 10 A Per Channel
 Avalanche Energy Capability . . . 105 mJ
 Input Transient Protection . . . 2000 V


Pinout

Connection Diagram


Specifications

Drain-to-source voltage, VDS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Gate-to-source voltage, VGS  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 V to 18 V
Continuous drain current, each output, all outputs on, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . 2 A
Pulsed drain current, each output, IOmax, TC = 25°C (see Note 1 and Figure 7)  . . . . . . . .   10 A
Continuous gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . .±25 mA
Pulsed gate-to-source zener diode current, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . .. . . .±250 mA
Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4 and 16)  . . . . . . . . . . . .  . .105 mJ
Continuous total power dissipation at (or below) TA = 25°C  . . . . . . . . . . . . . . . . . .  . . . . . .1.7 W
Power dissipation at (or below) TC = 75°C, all outputs on . . . . . . . . . . . . . . . . . .  . . . . . .18.75 W
Operating virtual junction temperature range, TJ  . . . . . . . . . . . . . . . . . . . . . .   . .40°C to 150°C
Operating case temperature range, TC  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40°C to 125°C
Storage temperature range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . .40°C to 125°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . .260°C


Description

The TPIC2601 is a monolithic power DMOS array that consists of six electrically isolated N-channel enhancement-mode DMOS transistors configured with a common source and open drains. Each TPIC2601 transistor features integrated high-current zener diodes to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 2000 V of ESD protection when tested using the human-body model.

The TPIC2601 is offered in a 15-pin PowerFLEXETM (KTC) package and is characterized for operation over the case temperature range of 40°C to 125°C. A 15-pin PowerFLEXETM(KTD) package is also available for TI Japan only.




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