Features: Low rDS(on): 0.25 Typ (Full H-Bridge) 0.35 Typ (Triple Half H-Bridge)
Pulsed Current: 6 A Per Channel (Full H-Bridge) 4 A Per Channel (Triple Half H-Bridge)
Matched Sense Transistor for Class A-B Linear Operation
Fast Commutation Speed Pinout
SpecificationsSupply-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 V
Source-to-GND voltage (Q3A, Q4A, Q5A) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .20 V
Output-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 V
Sense-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .20 V
Gate-to-source voltage range, VGS (Q1A, Q1B, Q2A, Q2B, Q3A, Q3B, Q4A, Q4B, Q5A, Q5B) . -0.5 V to 20V
Gate-to-source voltage range, VGS (Q2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.7 V to 6 V
Continuous gate-to-source zener-diode current (Q2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±10 mA
Pulsed gate-to-source zener-diode current (Q2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±50 mA
Continuous drain current, each output (Q1A, Q1B, Q2A, Q2B) . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.5A
Continuous drain current, each output (Q3A, Q3B, Q4A, Q4B, Q5A, Q5B) . . . . . . . . . . . . .. . . . . . 1A
Continuous drain current (Q2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 mA
Continuous source-to-drain diode current (Q1A, Q1B, Q2A, Q2B) . . . . . . . . . . . . . . . . . . . . . . . . .1.5A
Continuous source-to-drain diode current (Q3A, Q3B, Q4A, Q4B, Q5A, Q5B) . . . . . . . . . . . . . . . . . 1 A
Continuous source-to-drain diode current (Q2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 mA
Pulsed drain current, each output, Imax (Q1A, Q1B, Q2A, Q2B) (see Note 1 and Figure 24) . . .. . .6A
Pulsed drain current, each output, Imax (Q3A, Q3B, Q4A, Q4B, Q5A, Q5B)
(see Note 1 and Figure 25). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 A
Pulsed drain current, Imax (Q2C) (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA
Continuous total power dissipation, TC = 70°C (see Note 2 and Figures 24 and 25) . . . . .. . .2.86 W
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . .. . .40°C to 150°C
Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . .260°C
DescriptionThe TPIC1505 is a monolithic power DMOS array that consists of ten electrically isolated N-channel enhancement-mode power DMOS transistors, four of which are configured as a full H-bridge and six as a triple half H-bridge. The lower stage of the full H-bridge is provided with an integratedsense-FET to allow biasing of the bridge in class A-B operation.
The TPIC1505 is offered in a 24-pin wide-body surface-mount (DW) package and is characterized for operation over the case temperature range of 40°C to 125°C.
TPIC1505 Data Sheet
