TPIC1501A

Features: Low rDS(on): 0.1 Typ (Full H-Bridge) 0.4 Typ (Triple Half H-Bridge)Pulsed Current: 12 A Per Channel (Full H-Bridge) 6 A Per Channel (Triple Half H-Bridge)Matched Sense Transistor for Class A-B Linear OperationFast Commutation SpeedPinoutSpecificationsSupply-to-GND voltage . . . . . . ....

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SeekIC No. : 004526349 Detail

TPIC1501A: Features: Low rDS(on): 0.1 Typ (Full H-Bridge) 0.4 Typ (Triple Half H-Bridge)Pulsed Current: 12 A Per Channel (Full H-Bridge) 6 A Per Channel (Triple Half H-Bridge)Matched Sense Transistor for Cla...

floor Price/Ceiling Price

Part Number:
TPIC1501A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

 Low rDS(on): 0.1 Typ (Full H-Bridge) 0.4 Typ (Triple Half H-Bridge)
 Pulsed Current: 12 A Per Channel (Full H-Bridge) 6 A Per Channel (Triple Half H-Bridge)
 Matched Sense Transistor for Class A-B Linear Operation
 Fast Commutation Speed
 


Pinout

  Connection Diagram


Specifications

Supply-to-GND voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .20 V
Source-to-GND voltage (Q3A, Q4A, Q5A)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .20 V
Output-to-GND voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 V
Sense-to-GND voltage  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .20 V
Gate-to-source voltage range, VGS (Q1A, Q1B, Q2A, Q2B, Q3A, Q3B, Q4A, Q4B, Q5A, Q5B) . . .. . ±20 V
Gate-to-source voltage range, VGS (Q2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .0.7 V to 6 V
Continuous drain current, each output (Q1A, Q1B, Q2A, Q2B) . . . . . . . . . . . . . . . . . . . . . . . .  . . . . .3 A
Continuous drain current, each output (Q3A, Q3B, Q4A, Q4B, Q5A, Q5B)  . . . . . . . . . . . . . . . . . . .1.5 A
Continuous drain current (Q2C)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 mA
Continuous source-to-drain diode current (Q1A, Q1B, Q2A, Q2B)  . . . . . . . . . . . . . . . . . . . .  . . . . . .3 A
Continuous source-to-drain diode current (Q3A, Q3B, Q4A, Q4B, Q5A, Q5B) . . . . . . . . . . . . . . . . .1.5 A
Continuous source-to-drain diode current (Q2C)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 mA
Pulsed drain current, each output, Imax (Q1A, Q1B, Q2A, Q2B) (see Note 1 and Figure 24)  . . .. . .12 A
Pulsed drain current, each output, Imax (Q3A, Q3B, Q4A, Q4B, Q5A, Q5B)
                 (see Note 1 and Figure 25). . . . . . . . .  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .      6 A
Pulsed drain current, Imax (Q2C) (see Note 1)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . .  . .60 mA
Continuous total power dissipation, TC = 70°C (see Note 2 and Figures 24 and 25)  . . . .   . . . .2.86 W
Operating virtual junction temperature range, TJ  . . . . . . . . . . . . . . . . . . . . . . . . . .. . .40°C to 150°C
Operating case temperature range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . .40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  . . . . . . . . . . . . . . . . . .  . . . . . .260°C



Description

The TPIC1501A is a monolithic power array that consists of ten electrically isolated N-channel enhancement-mode power DMOS transistors, four of which are configured as a full H-bridge and six as a triple half H-bridge. The lower stage of the full H-bridge features an integrated sense FET to allow biasing of the bridge in class A-B operation.

The TPIC1501A is offered in a 24-pin wide-body surface-mount (DW) package and is characterized for operation over the case temperature range of 40°C to 125°C.




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